IndiumV3, Main, Repository, bibRecord, 00C384

Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures

Identifieur interne : 00C384 ( Main/Repository ); précédent : 00C383; suivant : 00C385

Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures

Auteurs : RBID : Pascal:03-0231557

Descripteurs français

Pascal (Inist)
- 7340S, Etude expérimentale, Semiconducteur organique, Indium, Argent, Structure MSM, Conduction limitée charge espace, Piège électron, Conduction saut.
Wicri :
- concept : Argent.

English descriptors

KwdEn :
- Electron traps, Experimental study, Hopping conduction, Indium, Metal-semiconductor-metal structures, Organic semiconductors, Silver, Space-charge-limited conduction.

Abstract

Samples comprising 1-μm-thick layers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) sandwiched between top-most In contact and bottom-most Ag contact were synthesized on n-Si(100) substrates. Current-voltage (I-V) characteristics were measured on the structures with all the layers evaporated in sequence, and on the structures with air exposed PTCDA/In and Ag/PTCDA interfaces. The current transport in the structures fabricated without interruption of vacuum is controlled by the space charge and by the traps. Air exposure of the In/PTCDA interface introduces additional trap sites in the PTCDA layer, yielding the space-charge-limited current in the presence of traps, exponentially distributed in energy, and with a hopping transport mobility. Air exposure of the Ag/PTCDA interface introduces a discrete level of traps in addition to exponentially distributed traps. © 2003 American Institute of Physics.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00D580

Links to Exploration step

Pascal:03-0231557

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures</title>
<author><name sortKey="Hudej, Robert" uniqKey="Hudej R">Robert Hudej</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nova Gorica Polytechnic, Vipavska 13, SI-5001 Nova Gorica, Slovenia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Slovénie</country>
<wicri:regionArea>Nova Gorica Polytechnic, Vipavska 13, SI-5001 Nova Gorica</wicri:regionArea>
<wicri:noRegion>SI-5001 Nova Gorica</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bratina, Gvido" uniqKey="Bratina G">Gvido Bratina</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nova Gorica Polytechnic, Vipavska 13, SI-5001 Nova Gorica, Slovenia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Slovénie</country>
<wicri:regionArea>Nova Gorica Polytechnic, Vipavska 13, SI-5001 Nova Gorica</wicri:regionArea>
<wicri:noRegion>SI-5001 Nova Gorica</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0231557</idno>
<date when="2003-05-15">2003-05-15</date>
<idno type="stanalyst">PASCAL 03-0231557 AIP</idno>
<idno type="RBID">Pascal:03-0231557</idno>
<idno type="wicri:Area/Main/Corpus">00D580</idno>
<idno type="wicri:Area/Main/Repository">00C384</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0021-8979</idno>
<title level="j" type="abbreviated">J. appl. phys.</title>
<title level="j" type="main">Journal of applied physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron traps</term>
<term>Experimental study</term>
<term>Hopping conduction</term>
<term>Indium</term>
<term>Metal-semiconductor-metal structures</term>
<term>Organic semiconductors</term>
<term>Silver</term>
<term>Space-charge-limited conduction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7340S</term>
<term>Etude expérimentale</term>
<term>Semiconducteur organique</term>
<term>Indium</term>
<term>Argent</term>
<term>Structure MSM</term>
<term>Conduction limitée charge espace</term>
<term>Piège électron</term>
<term>Conduction saut</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Samples comprising 1-μm-thick layers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) sandwiched between top-most In contact and bottom-most Ag contact were synthesized on n-Si(100) substrates. Current-voltage (I-V) characteristics were measured on the structures with all the layers evaporated in sequence, and on the structures with air exposed PTCDA/In and Ag/PTCDA interfaces. The current transport in the structures fabricated without interruption of vacuum is controlled by the space charge and by the traps. Air exposure of the In/PTCDA interface introduces additional trap sites in the PTCDA layer, yielding the space-charge-limited current in the presence of traps, exponentially distributed in energy, and with a hopping transport mobility. Air exposure of the Ag/PTCDA interface introduces a discrete level of traps in addition to exponentially distributed traps. © 2003 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0>
</fA01>
<fA02 i1="01"><s0>JAPIAU</s0>
</fA02>
<fA03 i2="1"><s0>J. appl. phys.</s0>
</fA03>
<fA05><s2>93</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>HUDEJ (Robert)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BRATINA (Gvido)</s1>
</fA11>
<fA14 i1="01"><s1>Nova Gorica Polytechnic, Vipavska 13, SI-5001 Nova Gorica, Slovenia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>6090-6094</s1>
</fA20>
<fA21><s1>2003-05-15</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>126</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2003 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>03-0231557</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of applied physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Samples comprising 1-μm-thick layers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) sandwiched between top-most In contact and bottom-most Ag contact were synthesized on n-Si(100) substrates. Current-voltage (I-V) characteristics were measured on the structures with all the layers evaporated in sequence, and on the structures with air exposed PTCDA/In and Ag/PTCDA interfaces. The current transport in the structures fabricated without interruption of vacuum is controlled by the space charge and by the traps. Air exposure of the In/PTCDA interface introduces additional trap sites in the PTCDA layer, yielding the space-charge-limited current in the presence of traps, exponentially distributed in energy, and with a hopping transport mobility. Air exposure of the Ag/PTCDA interface introduces a discrete level of traps in addition to exponentially distributed traps. © 2003 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C40S</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7340S</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur organique</s0>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Organic semiconductors</s0>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Argent</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Silver</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Structure MSM</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Metal-semiconductor-metal structures</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Conduction limitée charge espace</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Space-charge-limited conduction</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Piège électron</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electron traps</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Conduction saut</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Hopping conduction</s0>
</fC03>
<fN21><s1>139</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0319M000290</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00C384 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00C384 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:03-0231557
   |texte=   Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures

Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri